| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate carrying tray capable of preventing substrate warpage. <P>SOLUTION: To manufacture a semiconductor device or a liquid crystal device, techniques such as chemical vapor deposition (CVD), plasma sputtering, and vapor deposition are employed. Such techniques use a film forming process that forms a thin film on a substrate such as a wafer and glass substrate. Recently the thickness of a substrate is thin and therefore a sudden temperature change during the film forming process causes substrate warpage. In a substrate carrying tray, a plurality of holes are formed on the surface for carrying a substrate so that the amount of gas to move when the temperature changes to be 0.1 liter or larger. <P>COPYRIGHT: (C)2012,JPO&INPIT |
