| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To overcome the problem of a conventional semiconductor device that an electrode for connection is oxidized by gas generated from an SOG film of an interlayer insulating layer during degassing, and thereby it is hard to reduce the resistance on the electrode for connection. <P>SOLUTION: In the semiconductor device, opening regions 29 and 31 are formed in a TEOS film 27 and an SiN film 28 on an electrode 26 for connection. In the opening regions 29 and 31, a metal layer 32 for plating and a Cu plating layer 34 are laminated on the electrode 26 for connection. When the electrode 26 for connection is exposed from the opening regions 29 and 31, SOG films 14 and 22 are not exposed and since the electrode 26 for connection is not oxidized by gas generated from the SOG films 14 and 22 during degassing, resistance on the electrode 26 for connection is reduced. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
