| 摘要 |
PROBLEM TO BE SOLVED: To prevent cracking of a ceramic substrate used in a high voltage power module exceeding 1 kV or a power module where the operating temperature of a semiconductor exceeds 100°C because heat dissipation and insulation between a semiconductor element and a heat dissipator are important characteristics in these power modules, and to provide a semiconductor device which dissipates heat efficiently while exhibiting insulation characteristics. SOLUTION: The semiconductor device comprises a heat dissipation member, a metal member containing an electronic component including a semiconductor in a case and mounting the electronic component, and an electrode for conducting a current, wherein the metal member, a ceramic powder layer, and the heat dissipation member having a coarse surface portion are sequentially brought into contact with each other. A degassing layer is provided in the ceramic powder layer of the semiconductor device. COPYRIGHT: (C)2009,JPO&INPIT |
