| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device having a Cu (Copper) multilayer wiring structure. <P>SOLUTION: A semiconductor device in one embodiment includes: an opening 11 provided on the front surface of an interlayer insulating film 5; a barrier metal film 6 provided on the bottom and side surfaces of the opening 11; a barrier metal film 7 that has better coatability than the barrier metal film 6, that is in direct contact with the interlayer insulating film 5 at a barrier metal missing portion 21 of the opening 11 not covered with the barrier metal film 6, and that is provided on the barrier metal film 6 at a portion of the opening 11 covered with the barrier metal film 6 so as to cover the barrier metal film 6; and metal wiring 8 that is provided on the barrier metal film 7 and fills the opening 11. <P>COPYRIGHT: (C)2012,JPO&INPIT |
