SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can perform patterning though avoiding increase in an area of a memory cell array.

SOLUTION: In a memory cell array, memory strings are arranged each including a plurality of memory cells connected in series in a first direction. A plurality of word lines and selection gate lines are formed to extend in a second direction orthogonal to the first direction. The selection gate lines are formed to extend along the second direction. The plurality of word lines each has a first linewidth in the first direction and arranged at intervals of a first distance. The selection gate line includes a first wire part having a second linewidth in the fist direction larger than the first linewidth and a second wire part extending from an end portion of the first wire part and having a third linewidth same as the first linewidth. The first word lines adjacent to the selection gate lines are arranged at intervals of a second distance between the second wire part and the first word lines. The second distance is (4N+1) (where N is integer of one and over) times as large as the first distance.

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