SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor light emitting device and manufacturing method thereof are provided to relieve the stress delivered to the active layer by forming one or more superlattice layer on the top and lower part of the active layer. The first buffer layer(120) is formed on the substrate(110). The first buffer layer is the layer blocking strain due to the difference of lattice between the substrate and the epitaxial layer and coefficient of thermal expansion. The first superlattice layer(130) is formed on the first buffer layer. The first superlattice layer is the layer for the strain solution. The first conductivity semiconductor layer is formed on the first superlattice layer. The active layer(150) is formed on the first conductivity semiconductor layer. The second conductivity superlattice layer(160) is formed on the active layer. The second conductivity semiconductor layer(170) is formed on the second conductivity superlattice layer.