发明名称 |
BOTTOM SOURCE POWER MOSFET WITH SUBSTRATELESS AND MANUFACTURING METHOD THEREOF |
摘要 |
A bottom source power metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a gate electrode and a source electrode formed on an initial insulation layer on a first surface of a semiconductor chip and a drain electrode formed on a second surface of the semiconductor chip. The source electrode includes a source metal, a source electrode bump formed on the source metal and a source electrode metal layer on top of the source electrode bump. A first insulation layer covers the gate electrode. A through via aligned to the gate electrode is formed from the second surface of the chip to expose a portion of the gate electrode from the second surface.
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申请公布号 |
US2012032259(A1) |
申请公布日期 |
2012.02.09 |
申请号 |
US201113273219 |
申请日期 |
2011.10.13 |
申请人 |
HO YUEH-SE;XUE YAN XUN;HUANG PING |
发明人 |
HO YUEH-SE;XUE YAN XUN;HUANG PING |
分类号 |
H01L29/78;H01L21/283 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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