CMOS IMAGE SENSOR USING THIOPHENE DERIVATIVES

摘要

A CMOS image sensor using thiophene derivatives can implement stable the CMOS image sensor by using thiopene derivative in blue pixel region contacting the CMOS image sensor. The first, and the second and third photoelectro transform portions(10, 20, 30) are vertically formed in the upper part of the semiconductor substrate(1). The transparent insulating layer(41~44) are formed in the top and lower part for the first, and the second and third photoelectro transform portions. The CMOS circuit part is formed in the lower part of the third photoelectro transform portion. The first photoelectro transform portion absorbs mainly the blue light in which wavelength. The second photoelectro transform portion absorbs the green light. The third photoelectro transform portion absorbs the red light. The first photoelectro transform portion comprises the p-type thiopene derivative layer(11) and the n-type thiopene derivative layer(12) formed between the first electrode(13) and the second electrode(14).