| 摘要 |
PURPOSE: A nonvolatile memory device, a programming method thereof, a memory system including the same are provided to prevent an ISPP distortion due to variation by differently forming a bit line forcing voltage level between adjacent cells. CONSTITUTION: A bit line(BL1-BLn) is connected to a cell string(CS1-CSn). A page buffer(30a,30b,30c) is connected to the bit line. The page buffer coarsely forms a target bit lien forcing voltage level in a bit line. A bit line forcing voltage clamping circuit(40a,40b,40c) is connected between the bit line and the buffer. The bit line forcing voltage clamp circuit finely controls the target bit line forcing voltage level. |
