发明名称 Memory with low voltage mode operation
摘要 A memory comprising memory cells (113, 117, 115, 119) wherein the memory is configured to operate in a normal voltage mode and a low voltage mode. The method includes during the normal voltage mode, operating the memory cells at a first voltage across each of the memory cells. The method further includes upon transitioning from the normal voltage mode to the low voltage mode, operating the memory cells at a second voltage across each of the memory cells, wherein the second voltage is lower than the first voltage. The method further includes performing an access on a subset of the memory cells while maintaining the second voltage across the memory cells.
申请公布号 EP2416322(A1) 申请公布日期 2012.02.08
申请号 EP20110170299 申请日期 2011.06.17
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 NGUYEN, HUY B;COOPER, TROY L.;RAMARAJU, RAVINDRARAJ;RUSSELL, ANDREW C
分类号 G11C11/417 主分类号 G11C11/417
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