发明名称 |
Memory with low voltage mode operation |
摘要 |
A memory comprising memory cells (113, 117, 115, 119) wherein the memory is configured to operate in a normal voltage mode and a low voltage mode. The method includes during the normal voltage mode, operating the memory cells at a first voltage across each of the memory cells. The method further includes upon transitioning from the normal voltage mode to the low voltage mode, operating the memory cells at a second voltage across each of the memory cells, wherein the second voltage is lower than the first voltage. The method further includes performing an access on a subset of the memory cells while maintaining the second voltage across the memory cells. |
申请公布号 |
EP2416322(A1) |
申请公布日期 |
2012.02.08 |
申请号 |
EP20110170299 |
申请日期 |
2011.06.17 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
NGUYEN, HUY B;COOPER, TROY L.;RAMARAJU, RAVINDRARAJ;RUSSELL, ANDREW C |
分类号 |
G11C11/417 |
主分类号 |
G11C11/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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