MAGNETIC MEMORY DEVICE

摘要

PURPOSE: A magnetic memory device is provided to be optimized to low power consumption and/or high integration properties. CONSTITUTION: A first inter layer dielectric film(102) is arranged on a substrate(100). A reference pattern(120a) and a free pattern(130a) are formed on the first inter layer dielectric film. The reference pattern comprises a fixed pattern(110a) and an exchange bonding pattern(114a). A tunnel barrier pattern(125a) is placed between the reference pattern and the free pattern. The tunnel barrier pattern has thinner thickness than a spin diffusion length.