| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor optical integrated device, wherein variations in the element isolation resistance among individual elements can be reduced. SOLUTION: The method of manufacturing the semiconductor optical integrated device 1 forms a shape retaining layer 31 consisting of InP with p-type conductivity on the surface of a contact layer 16 consisting of InGaAs in performing the wet etching for forming an element isolation part 32. The shape retaining layer 31 constitutes the surface layer on the apex of a ridge section 5, acting to compensate for the adhesiveness between an insulating film 44 consisting of SiO2 and the contact layer 16. In performing the wet etching, this relaxes a difference in the etching rate between a corner 5a of the ridge section 5 and the rest of the parts, thereby allowing the side etching to be restrained. Accordingly, the method of manufacturing the semiconductor optical integrated device 1 reduces variations in the geometrical dimensions of the element isolation part 32, resulting in variation reduction in the element isolation resistance among individual elements. COPYRIGHT: (C)2009,JPO&INPIT
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