发明名称 |
LANTHANUM TARGET FOR SPUTTERING |
摘要 |
Provided are a lanthanum target for sputtering which has a recrystallized structure with an average crystal grain size of 100 µm or less and has no spotty macro patterns on the surface; and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500°C and subsequently subject to hot upset forging to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering which has no spotty macro patterns on the surface, and a method of producing the same. |
申请公布号 |
EP2415899(A1) |
申请公布日期 |
2012.02.08 |
申请号 |
EP20100758414 |
申请日期 |
2010.03.17 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
TSUKAMOTO SHIRO;OTSUKI TOMIO |
分类号 |
C23C14/34;B21J5/00;C22C28/00;C22F1/00;H01J37/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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