| 摘要 |
A nitride semiconductor laser element has a ridge (24) formed on the top face (20) of a nitride semiconductor layer (20). Cavity planes (25a,25b) are formed at the ends of a waveguide region (26) provided beneath the ridge. Insulating film (30) is formed on the side faces of the ridge (24) an on the top face of the nitride semiconductor layer (20) such that its ends on the cavity plane side are spaced from cavity planes. End face protective films (70a,70b) made of AIGaN are formed on the cavity planes, a part of the upper face of the nitride semiconductor layer (20) and a part of the surface of insulating film (30), whereby a first region contacting the insulating film has a crystallinity different from a second region contacting semiconductor layer (20). Degradation of the cavity plane can be suppressed. |
