发明名称 |
OPTOELECTRONIC SEMICONDUCTOR CHIP |
摘要 |
<p>An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50≰∫(35−k(z))dz−2.5N−1.5∫dz≰120.</p> |
申请公布号 |
EP2415085(A1) |
申请公布日期 |
2012.02.08 |
申请号 |
EP20100707304 |
申请日期 |
2010.03.10 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
AVRAMESCU, ADRIAN, STEFAN;QUEREN, DESIREE;EICHLER, CHRISTOPH;SABATHIL, MATTHIAS;LUTGEN, STEPHAN;STRAUSS, UWE |
分类号 |
H01L33/32;H01L33/06 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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