| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems of a performance improving technique in microfabrication of a semiconductor element using a high-energy line, X-ray, electron beam or EUV light, and to provide a positive resist composition which simultaneously satisfies high sensitivity, high resolution, a good pattern profile and good line edge roughness, a positive resist composition having good contrast under exposure with EUV light and free from the problem of outgassing in exposure, and a pattern forming method using the same. <P>SOLUTION: The positive resist composition comprises a resin which comprises a styrene repeating unit having specific substituents and is insoluble or slightly soluble in an alkali developer and becomes soluble in the alkali developer under the action of an acid, and a specific sulfonium compound generating an acid upon irradiation with an actinic ray or radiation. The pattern forming method uses this positive resist composition. <P>COPYRIGHT: (C)2008,JPO&INPIT |
