发明名称 |
INTEGRATED CIRCUIT ON SOI HAVING TRANSISTORS WITH SEPARATE THRESHOLD VOLTAGES |
摘要 |
The invention relates to an integrated circuit including an active semiconducting layer separated from a semiconducting substrate layer by an embedded insulating material surface, including: first and second transistors (205, 213) of a single type; first and second floorplans arranged vertically perpendicular to the first and second transistors; wherein the first transistor has a doping of the floorplan thereof, opposite that of the source thereof, and a first threshold voltage; the second transistor has a doping of the floorplan thereof, identical to that of the source thereof, and a second threshold voltage; the first threshold voltage is dependent on the potential difference applied between the source and the floorplan of the first transistor; and the second threshold voltage is dependent on the potential difference applied between the source and the floorplan of the second transistor. |
申请公布号 |
EP2415079(A1) |
申请公布日期 |
2012.02.08 |
申请号 |
EP20100712438 |
申请日期 |
2010.04.01 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
THOMAS, OLIVIER;NOEL, JEAN-PHILIPPE |
分类号 |
H01L21/84;H01L21/336;H01L21/8238;H01L21/8244;H01L27/092;H01L27/11;H01L27/12;H01L29/786 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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