发明名称 エピタキシャル層を成長させることに用いるマスク及びその使用方法
摘要 The invention relates to a mask for the growth of an epitaxial structure and a usage of the mask. The mask comprises a carbon nanotube layer; the carbon nanotube layer is provided with a plurality of openings through which the epitaxial growth surface of a substrate can be exposed partially; and an epitaxial layer is grown on the epitaxial growth surface of the substrate. The usage for the mask comprises the following steps: providing one substrate which is provided with the epitaxial growth surface for supporting the growth of the epitaxial layer, and arranging the mask on the epitaxial growth surface of the substrate.
申请公布号 JP5931402(B2) 申请公布日期 2016.06.08
申请号 JP20110238660 申请日期 2011.10.31
申请人 ツィンファ ユニバーシティ;鴻海精密工業股▲ふん▼有限公司 发明人 魏 洋;馮 辰;▲ハン▼ 守善
分类号 C30B25/04;C23C16/04;H01L21/205 主分类号 C30B25/04
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