| 摘要 |
<p>A silicon single crystal production method according to this invention will allow for the suppression of the deformation and the dislocations as well as the successful omission of the tail section. The silicon single crystal production method includes steps of growing the straight-body section 4 of the silicon single crystal 2 under the influence of the horizontal magnetic field with a magnetic flux density at its magnetic center L2 being equal to or more than 1000 Gauss, and equal to or less than 2000 Gauss, then reducing the relative lifting speed of the silicon single crystal to the surface of the melt 32 to 0 mm/minute, then maintaining the static state until there is a decrease in the apparent weight of the silicon single crystal, then further maintaining the static state so that the whole growth front of the silicon single crystal will form a convex shape protruding in the opposite direction to the lifting direction of the silicon single crystal, and finally separating the silicon single crystal from the melt.</p> |
