| 摘要 |
<p>PURPOSE: A photo-resist composition is provided to be applicable for various lithographic processes, especially applicable for extreme ultraviolet ray lithography and electron beam lithography. CONSTITUTION: A photo-resist composition includes a resin, an acid generator, and a compound represented by chemical formula I. The resin includes a structural unit which is derived from a compound with an acid-labile group. The resin is insoluble or rarely-soluble in an alkali aqueous solution and becomes soluble in the alkali aqueous solution by the action of acid. In the chemical formula I, the R1 and the R2 are respectively C1 to C12 hydrocarbon group, C1 to C6 alkoxy group, C2 to C7 acyl group, C2 to C7 acyloxy group, C2 to C7 alkoxycarbonyl group, nitro group, or halogen atom. The m and the n are respectively the integer of 0 to 4.</p> |
