发明名称 POWER AMPLIFIER CIRCUIT AND COMMUNICATION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a power amplifier circuit that suppresses parasitic capacitance between an emitter and a collector, and suppresses heat increase even when outputting high power with a high frequency.SOLUTION: The power amplifier circuit includes: a lower layer metal 11 on which an emitter or a collector is wired; and an upper layer metal 12 on which a collector or an emitter is wired. The upper layer metal 12 is thinned out in terms of area, and, in the area where the upper layer metal 12 is thinned out, the wiring of the lower layer metal 11 is extracted to a height of the upper layer metal 12.SELECTED DRAWING: Figure 1
申请公布号 JP2016111100(A) 申请公布日期 2016.06.20
申请号 JP20140245309 申请日期 2014.12.03
申请人 SAMSUNG ELECTRO-MECHANICS CO LTD 发明人 MURAKAMI TADAMASA
分类号 H01L21/331;H01L29/732 主分类号 H01L21/331
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