发明名称 ELECTRONIC STRUCTURE INCLUDING AN EPITAXIAL LAYER ON SINTERED SILICON
摘要 The invention relates to a method and an electronic structure (35) including a substrate (26, 28), produced by sintering silicon powders, and at least one epitaxial layer (32). The invention also relates to photovoltaic cells and can be used in other fields, such as the fields of electronics, microelectronics or optoelectronics.
申请公布号 EP2415084(A2) 申请公布日期 2012.02.08
申请号 EP20100723184 申请日期 2010.04.01
申请人 S'TILE 发明人 STRABONI, ALAIN
分类号 H01L31/18;C04B35/645;C04B35/65;H01L21/20;H01L21/22;H01L31/042 主分类号 H01L31/18
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