发明名称 Electrically isolated vertical light emitting diode structure
摘要 A light emitting device is provided having high luminous output while maintaining high wall plug efficiency, wherein the high thermal and electrical conductivity paths of the device are separated during the semiconductor wafer and die level manufacturing step. The device includes an electrical conducting mirror layer, which reflects at least 60% of generated light incident on it, and an isolation layer having electrical insulating properties and thermal conducting properties. A first electrode, which is not in contact with the main semiconductor layers of the device, is located on the mirror layer. A light emitting module, system and projection system incorporating the light emitting device are also described, as is a method of manufacture of the device.
申请公布号 GB2454060(B) 申请公布日期 2012.02.08
申请号 GB20080016771 申请日期 2008.09.12
申请人 PHOTONSTAR LED LIMITED 发明人 JAMES STUART MCKENZIE;MAJD ZOOROB
分类号 H01L33/64;H01L25/075;H01L33/00;H01L33/46;H01L33/62 主分类号 H01L33/64
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