| 摘要 |
PURPOSE: A trench-filling method and a film deposition system are provided to prevent oxidation on a silicon film when gas is released by arranging a native oxide film on the surface of the silicon film in beforehand. CONSTITUTION: A pad oxide film(2) is formed by thermally oxidizing the surface of a silicon substrate(1). A silicon nitride film(3) is arranged on the pad oxide film. A photo-resist film(4) is formed by applying photo-resist materials on the silicon nitride film. A trench(6) is formed on the silicon substrate by anisotropic etching of the silicon substrate and the pad oxide film. An oxide film(7) is arranged on the surface of the silicon substrate exposed from the trench.
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