发明名称 THERMOELECTRIC MATERIALS DEFORMED BY CRYOGENIC IMPACT AND PROCESS FOR PREPARING THE SAME
摘要 PURPOSE: A thermoelectric material which is deformed with low temperature and a manufacturing method thereof are provided to improve performance of the thermoelectric material with a flat anisotropy fine structure. CONSTITUTION: A composite precursor includes thermoelectric powder(2) and powder with thermal and electrical insulation properties. The composite precursor is packed and sealed after being introduced into a metal jacket(1). A cold shock(4) is applied to the metal jacket which includes the thermoelectric powder within a supporter(5). A fine structure of the thermoelectric powder is deformed. The cold shock is performed at a temperature of approximately 0°C or less.
申请公布号 KR20120011779(A) 申请公布日期 2012.02.08
申请号 KR20110061789 申请日期 2011.06.24
申请人 SAMSUNG ELECTRONICS CO., LTD.;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 LEE, SANG MOCK;LEE, KYU HYOUNG;JIN SUNG HO
分类号 H01L35/14;H01L35/34 主分类号 H01L35/14
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