Method of making a semiconductor device having a passivation layer and corresponding semiconductor device

摘要

The method involves providing a semiconductor substrate (1) e.g. p-type semiconductor or n-type semiconductor, and forming a functional layer on a semiconductor surface of the substrate. A doping region (3) is produced at the surface by collecting a doping substance i.e. aluminum, from the functional layer in the substrate. The functional layer is formed in such a manner that the functional layer is passivated as a passivation layer (4) of the semiconductor surface during manufacture of a semiconductor device. An opening (21) is formed in the functional layer application of energy. An independent claim is also included for a semiconductor device comprising a semiconductor substrate.