| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing pad which has a number of independent cavities in a layer in direct contact with the machining surface of a wafer to give uniform pressure to the whole surface of the wafer while machining the surface of the wafer with high accuracy, which has sufficient abrasive particle holding density and high surface cavity density to effectively improve a polishing speed while shortening a time required for dressing and reducing the frequency of dressing, and which adequately meets requirements of flatness with high thickness accuracy and shape accuracy without the need for a cushion layer provided on the reverse side. <P>SOLUTION: This synthetic resin polishing pad has a shore D hardness of 50 or more, a compression rate of 1.3-5.5%, and a compression recovery rate of 50% or more. <P>COPYRIGHT: (C)2010,JPO&INPIT |
