发明名称 |
Method of forming a contact structure |
摘要 |
An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal layer may be formed on the material layer including silicon and oxygen. The material layer including silicon and oxygen may be reacted with the metal layer to form a metal oxide silicide layer at least on the contact region. A conductive layer may be formed on the metal oxide silicide layer to fill up the opening. |
申请公布号 |
US8110499(B2) |
申请公布日期 |
2012.02.07 |
申请号 |
US20090437390 |
申请日期 |
2009.05.07 |
申请人 |
KANG DAE-HYUK;KIM YOUNG-HOO;HONG CHANG-KI;LEE KUN-TACK;LEE JAE-DONG;EOM DAE-HONG;HAN JEONG-NAM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG DAE-HYUK;KIM YOUNG-HOO;HONG CHANG-KI;LEE KUN-TACK;LEE JAE-DONG;EOM DAE-HONG;HAN JEONG-NAM |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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