发明名称 |
Method of manufacturing semiconductor wafer by forming a strain relaxation SiGe layer on an insulating layer of SOI wafer |
摘要 |
A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of the SiGe layer is formed on the SOI layer at a gradient of Ge concentration gradually decreasing toward the surface and then subjected to a heat treatment in an oxidizing atmosphere. |
申请公布号 |
US8110486(B2) |
申请公布日期 |
2012.02.07 |
申请号 |
US20070649943 |
申请日期 |
2007.01.05 |
申请人 |
MATSUMOTO KOJI;HORA TOMOYUKI;ENDO AKIHIKO;MORITA ETSUROU;NINOMIYA MASAHARU;SUMCO CORPORATION |
发明人 |
MATSUMOTO KOJI;HORA TOMOYUKI;ENDO AKIHIKO;MORITA ETSUROU;NINOMIYA MASAHARU |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|