发明名称 Method for passivating exposed copper surfaces in a metallization layer of a semiconductor device
摘要 When forming sophisticated metallization systems, surface integrity of an exposed metal surface, such as a copper-containing surface, may be enhanced by exposing the surface to a vapor of a passivation agent. Due to the corresponding interaction with the metal surface, enhanced integrity may be accomplished, while at the same time damage of exposed dielectric surface portions may be significantly reduced compared to conventional aggressive wet chemical cleaning processes that are typically used in conventional patterning regimes.
申请公布号 US8110498(B2) 申请公布日期 2012.02.07
申请号 US20090555844 申请日期 2009.09.09
申请人 SCHALLER MATTHIAS;FISCHER DANIEL;LEPPACK SUSANNE;ADVANCED MICRO DEVICES, INC. 发明人 SCHALLER MATTHIAS;FISCHER DANIEL;LEPPACK SUSANNE
分类号 H01L21/44 主分类号 H01L21/44
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