| 发明名称 |
NAND step voltage switching method |
| 摘要 |
Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow threshold voltage situations and programming at a larger Vstep increment where faster programming is desired.
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| 申请公布号 |
US8111555(B2) |
申请公布日期 |
2012.02.07 |
| 申请号 |
US20100696279 |
申请日期 |
2010.01.29 |
| 申请人 |
GODA AKIRA;KIM TAEHOON;RIVERS DOYLE;PORTER ROGER;MICRON TECHNOLOGY, INC. |
发明人 |
GODA AKIRA;KIM TAEHOON;RIVERS DOYLE;PORTER ROGER |
| 分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
| 代理机构 |
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