发明名称 |
Light emitting device, light emitting device package and method for fabricating light emitting device |
摘要 |
PURPOSE: A light emitting device, a light emitting device package, and a method for manufacturing a light emitting device are provided to improve the light efficiency of a light emitting device by increasing the number of electronics and holes which are recombined in an active layer. CONSTITUTION: An n-type semiconductor layer is formed on a substrate. An active layer is formed on the n-type semiconductor layer. The active layer includes one or more well layers and barrier layers. An electron blocking layer consisting of InAlN(Indium Aluminium Nitride) is formed on the active layer. A p-type semiconductor layer is formed on the electron blocking layer. |
申请公布号 |
KR20120011198(A) |
申请公布日期 |
2012.02.07 |
申请号 |
KR20100072901 |
申请日期 |
2010.07.28 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
NA, JONG HO;YIM, JEONG SOON |
分类号 |
H01L33/14 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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