发明名称 |
Semiconductor device and method of forming overlapping semiconductor die with coplanar vertical interconnect structure |
摘要 |
A semiconductor device is made by forming first and interconnect structures over a first semiconductor die. A third interconnect structure is formed in proximity to the first die. A second semiconductor die is mounted over the second and third interconnect structures. An encapsulant is deposited over the first and second die and first, second, and third interconnect structures. A backside of the second die is substantially coplanar with the first interconnect structure and a backside of the first semiconductor die is substantially coplanar with the third interconnect structure. The first interconnect structure has a height which is substantially the same as a combination of a height of the second interconnect structure and a thickness of the second die. The third interconnect structure has a height which is substantially the same as a combination of a height of the second interconnect structure and a thickness of the first die.
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申请公布号 |
US8110440(B2) |
申请公布日期 |
2012.02.07 |
申请号 |
US20090467865 |
申请日期 |
2009.05.18 |
申请人 |
BATHAN HENRY D.;CAMACHO ZIGMUND R.;PISIGAN JAIRUS L.;STATS CHIPPAC, LTD. |
发明人 |
BATHAN HENRY D.;CAMACHO ZIGMUND R.;PISIGAN JAIRUS L. |
分类号 |
H01L25/00;H01L23/488 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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