发明名称 |
Method for manufacturing semiconductor device |
摘要 |
An embodiment of the present invention provides a method for manufacturing a semiconductor device. This method comprises: forming a seed film at least on an inner face of a recessed portion of a substrate; forming a protection film on the seed film, the protection film being made of a material that is more easily oxidized than a material forming the seed film; heat-treating the protection film; exposing at least part of the seed film by removing at least part of the heat-treated protection film; forming a plating film on the seed film through electrolytic plating to be buried in the recessed portion, by supplying current to the seed film that is at least partially exposed; and removing the plating film except for a portion buried in the recessed portion. |
申请公布号 |
US8110497(B2) |
申请公布日期 |
2012.02.07 |
申请号 |
US20090646598 |
申请日期 |
2009.12.23 |
申请人 |
SAKATA ATSUKO;YAMASHITA SOICHI;SONODA YASUYUKI;TOYODA HIROSHI;HASUNUMA MASAHIKO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAKATA ATSUKO;YAMASHITA SOICHI;SONODA YASUYUKI;TOYODA HIROSHI;HASUNUMA MASAHIKO |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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