发明名称 |
Nonvolatile semiconductor memory device and method of controlling the same |
摘要 |
Provided is a nonvolatile semiconductor memory device capable of performing a writing action for a memory cell at high speed. The device includes a memory cell array having a first sub-bank and a second sub-bank each having a plurality of nonvolatile memory cells arranged in a form of a matrix; a row decoder shared by the first sub-bank and the second sub-bank; a first column decoder and a second column decoder provided in the first sub-bank and the second sub-bank, respectively; and a control circuit arranged to execute alternately a first action cycle to perform a programming action in the first sub-bank and a reading action for a programming verifying action in the second sub-bank and a second action cycle to perform the reading action for the programming verifying action in the first sub-bank and the programming action in the second sub-bank. |
申请公布号 |
US8111573(B2) |
申请公布日期 |
2012.02.07 |
申请号 |
US20090611279 |
申请日期 |
2009.11.03 |
申请人 |
ISHIHARA KAZUYA;ISHIKAWA YUTAKA;OHTA YOSHIJI;SHARP KABUSHIKI KAISHA |
发明人 |
ISHIHARA KAZUYA;ISHIKAWA YUTAKA;OHTA YOSHIJI |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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