发明名称 |
Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same |
摘要 |
A field-effect transistor (FET) with a round-shaped nano-wire channel and a method of manufacturing the FET are provided. According to the method, source and drain regions are formed on a semiconductor substrate. A plurality of preliminary channel regions is coupled between the source and drain regions. The preliminary channel regions are etched, and the etched preliminary channel regions are annealed to form FET channel regions, the FET channel regions having a substantially circular cross-sectional shape. |
申请公布号 |
US8110471(B2) |
申请公布日期 |
2012.02.07 |
申请号 |
US20090623970 |
申请日期 |
2009.11.23 |
申请人 |
LEE SUNGYOUNG;SHIN DONGSUK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SUNGYOUNG;SHIN DONGSUK |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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