STATIC RANDOM ACCESS MEMORY DEVICE INCLUDING NEGATIVE VOLTAGE LEVEL SHIFTER

摘要

PURPOSE: A static random access memory device including a negative voltage level shifter is provided to stabilize an operation by applying a negative voltage to a write driver, a sensing amplifier, an address decoder, and a word line. CONSTITUTION: Memory cells are respectively connected to word lines and bit line pairs. A row decoder(140) selects one of the word lines. A column decoder(150) selects one of the bit line pairs. A write driver(120) writes data in the selected memory cell. A control logic(110) controls the write driver. The negative voltage is applied to one bit line of the selected memory cell. The control logic controls the row decoder. The negative voltage is respectively applied to the unselected word lines. The control logic controls the column decoder. The negative voltage is applied to each selection switch of the unselected bit line pairs.