发明名称 |
Inverted-trench grounded-source FET structure using conductive substrates, with highly doped substrates |
摘要 |
This invention discloses an inverted field-effect-transistor (iT-FET) semiconductor device that includes a source disposed on a bottom and a drain disposed on a top of a semiconductor substrate. The semiconductor power device further comprises a trench-sidewall gate placed on sidewalls at a lower portion of a vertical trench surrounded by a body region encompassing a source region with a low resistivity body-source structure connected to a bottom source electrode and a drain link region disposed on top of said body regions thus constituting a drift region. The drift region is operated with a floating potential said iT-FET device achieving a self-termination. |
申请公布号 |
US2012028426(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113200867 |
申请日期 |
2011.10.04 |
申请人 |
HEBERT FRANCOIS;ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED |
发明人 |
HEBERT FRANCOIS |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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