发明名称 SUBSTRATE-EMBEDDED CAPACITOR, CAPACITOR-INTEGRATED SUBSTRATE PROVIDED WITH SAME, AND METHOD FOR PRODUCING SUBSTRATE-EMBEDDED CAPACITOR
摘要 <p>The disclosed substrate-embedded capacitor is characterized by being provided with: a first electrode that extends in a predetermined direction; a dielectric layer provided to the aforementioned first electrode; a second electrode that is provided to the aforementioned dielectric layer, faces the aforementioned first electrode with the dielectric layer therebetween, and has an end section that protrudes in the aforementioned predetermined direction from the aforementioned dielectric layer; and an electrode layer that is provided leaving a gap from the aforementioned first electrode in the aforementioned predetermined direction. The substrate-embedded capacitor is further characterized by the end section of the aforementioned second electrode in the aforementioned predetermined direction being connected to the aforementioned electrode layer, and the surface of the aforementioned electrode layer being provided in a manner so as to be positioned in the same plane as the surface of the aforementioned first electrode.</p>
申请公布号 WO2012014648(A1) 申请公布日期 2012.02.02
申请号 WO2011JP65545 申请日期 2011.07.07
申请人 SANYO ELECTRIC CO., LTD.;NOGUCHI HITOSHI;EZAKI KENICHI 发明人 NOGUCHI HITOSHI;EZAKI KENICHI
分类号 H01G4/12;H01G4/18;H01G4/33;H05K1/16;H05K3/46 主分类号 H01G4/12
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