| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for removing at least a part exposed on a carbide silicon layer formed on the substrate. <P>SOLUTION: In a method of removal of silicon carbide layers, by exposing a carbide-silicon layer 45 to an oxygen-containing plasma, an exposed part of the carbide-silicon layer 45 is at least converted into an oxide-silicon layer and the oxide-silicon layer is removed from the substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
