发明名称 Error correction in memory devices by multiple readings with different references
摘要 A memory device may include memory cells. The method may include receiving a request of reading a selected data word associated with a selected code word stored with an error correction code, and reading a first code word representing a first version of the selected code word by comparing a state of each selected memory cell with a first reference. The method may include verifying the first code word, setting the selected code word according to the first code word in response to a positive verification, reading at least one second code word representing a second version of the selected code word, verifying the second code word, and setting the selected code word according to the second code word in response to a negative verification of the first code word and to a positive verification of the second code word.
申请公布号 US9430328(B2) 申请公布日期 2016.08.30
申请号 US201514597845 申请日期 2015.01.15
申请人 STMICROELECTRONICS S.R.L.;STMICROELECTRONICS PTE LTD 发明人 Conte Antonino;Khairnar Kailash
分类号 G11C29/00;G06F11/10;G11C29/52;G06F11/08;G11C13/00 主分类号 G11C29/00
代理机构 Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. 代理人 Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
主权项 1. A method for reading a memory device comprising a plurality of memory cells, the method comprising: receiving a request of reading a selected data word associated with a selected code word comprising a plurality of logic values stored in at least one selected memory cell of the plurality of memory cells with an error correction code; reading a first code word representing a first version of the selected code word by comparing a state of the at least one selected memory cell with a first reference; verifying the first code word according to the error correction code; setting the selected code word according to the first code word in response to a positive verification of the first code word; reading at least one second code word representing a second version of the selected code word by comparing the state of the at least one selected memory cell with a second reference; verifying the second code word according to the error correction code; and setting the selected code word according to the second code word in response to a negative verification of the first code word and to a positive verification of the second code word.
地址 Agrate Brianza (MB) IT