发明名称 |
Error correction in memory devices by multiple readings with different references |
摘要 |
A memory device may include memory cells. The method may include receiving a request of reading a selected data word associated with a selected code word stored with an error correction code, and reading a first code word representing a first version of the selected code word by comparing a state of each selected memory cell with a first reference. The method may include verifying the first code word, setting the selected code word according to the first code word in response to a positive verification, reading at least one second code word representing a second version of the selected code word, verifying the second code word, and setting the selected code word according to the second code word in response to a negative verification of the first code word and to a positive verification of the second code word. |
申请公布号 |
US9430328(B2) |
申请公布日期 |
2016.08.30 |
申请号 |
US201514597845 |
申请日期 |
2015.01.15 |
申请人 |
STMICROELECTRONICS S.R.L.;STMICROELECTRONICS PTE LTD |
发明人 |
Conte Antonino;Khairnar Kailash |
分类号 |
G11C29/00;G06F11/10;G11C29/52;G06F11/08;G11C13/00 |
主分类号 |
G11C29/00 |
代理机构 |
Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. |
代理人 |
Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. |
主权项 |
1. A method for reading a memory device comprising a plurality of memory cells, the method comprising:
receiving a request of reading a selected data word associated with a selected code word comprising a plurality of logic values stored in at least one selected memory cell of the plurality of memory cells with an error correction code; reading a first code word representing a first version of the selected code word by comparing a state of the at least one selected memory cell with a first reference; verifying the first code word according to the error correction code; setting the selected code word according to the first code word in response to a positive verification of the first code word; reading at least one second code word representing a second version of the selected code word by comparing the state of the at least one selected memory cell with a second reference; verifying the second code word according to the error correction code; and setting the selected code word according to the second code word in response to a negative verification of the first code word and to a positive verification of the second code word. |
地址 |
Agrate Brianza (MB) IT |