| 摘要 |
Disclosed is a multilayer ceramic electronic component, comprising an element body obtained by stacking dielectric layers (thickness t1) and electrode layers (thickness t2). The dielectric layer (2) includes a compound expressed by ABO3 (A includes Ba, and may include Ca or Sr; and B includes Ti, and may include Zr or Hf), and includes 0.75 to 2.0 moles of MgO, 0.4 to 1.0 mole of an oxide of Y, Dy, Ho and the like in terms of the oxide, and 0.4 to 0.8 mole of SiO2 per 100 moles of the compound. A segregation phase (20) containing Mg is formed in at least a part of an electrode missing portion (30), where the electrode layer is supposed to be formed but no electrode layer is formed. Line coverage of the electrode layer (3) is 60 to 90% and relations of 0.3≦̸t1≦̸2.0 and 0.3≦̸t2<1.0 are fulfilled. |
