发明名称 METHOD OF FORMING SEMICONDUCTOR STRUCTURES WITH CONTACT HOLES
摘要 Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.
申请公布号 US2012028476(A1) 申请公布日期 2012.02.02
申请号 US20100846020 申请日期 2010.07.29
申请人 LI WAI-KIN;HUANG WU-SONG;CHENG JOY;CHEN KUANG-JUNG;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 LI WAI-KIN;HUANG WU-SONG;CHENG JOY;CHEN KUANG-JUNG
分类号 H01L21/312 主分类号 H01L21/312
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