| 摘要 |
<p>A fuse structure and a method for forming the same are provided. The method comprises the following steps: providing a semiconductor substrate (20) with a circuit structure formed on the semiconductor substrate (20) and a metal interconnection layer (22) formed on the circuit structure; and forming a fuse (33') on the metal interconnection layer (22) with an interconnection structure formed between the fuse (33') and the metal interconnection layer (22), wherein the fuse material is selected from polycrystalline germanium-silicon, polycrystalline germanium, amorphous silicon, amorphous germanium or amorphous germanium-silicon. Because the material of polycrystalline germanium-silicon, polycrystalline germanium, amorphous silicon, amorphous germanium or amorphous germanium-silicon has a high resistance, the required fusing current is low and the circuit structure can not be easily damaged. The chip area is reduced because the fuse structure is stacked on the metal interconnection layer.</p> |
