Method for producing heat dissipation mass of semiconductor device, involves covering surface of provisional substrate by form of electrical conducting layer

摘要

#CMT# #/CMT# The method involves covering a surface of a provisional substrate (100) by a form of an electrical conducting layer (104). A metal bump connects a semiconductor chip with the electrical conducting layer. The metal bump is placed between the semiconductor chip and the electrical conducting layer. The electrical conducting layer has a metal layer or a transparent conducting layer, where material of metal layer comprises aluminum, silver and platinum. The material of the transparent conductive layer comprises indium titanium oxide. #CMT#USE : #/CMT# Method for producing a heat dissipation mass of a semiconductor device. #CMT#ADVANTAGE : #/CMT# The metal bump connects a semiconductor chip with the electrical conducting layer, and hence ensures an improved operating quality and efficiency of the semiconductor device. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a schematic view of a semiconductor device. 100 : Substrate 102 : Upper surface 104 : Electrical conducting layer.