| 发明名称 |
EPITAXIAL WAFER, AND METHOD FOR PRODUCING EPITAXIAL WAFER |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial wafer which can reduce wafer cracking by using a GaN wafer which is not beveled. <P>SOLUTION: An epitaxial wafer E2 includes a GaN wafer 11 and an In<SB POS="POST">X1</SB>Al<SB POS="POST">X2</SB>Ga<SB POS="POST">1-X1-X2</SB>N (0<X1<1, 0≤X2<1, 0<X1+X2<1) buffer layer 13. A GaN layer 17 is provided between the GaN wafer 11 and the In<SB POS="POST">X1</SB>Al<SB POS="POST">X2</SB>Ga<SB POS="POST">1-X1-X2</SB>N buffer layer 13. The GaN layer 17 is grown on a major surface 11b of the GaN wafer 11. The GaN layer 17 forms a homojunction 19 with the major surface 11b of the GaN wafer 11. A semiconductor region having an optical gain such as an active layer is not provided between the GaN wafer 11 and the In<SB POS="POST">X1</SB>Al<SB POS="POST">X2</SB>Ga<SB POS="POST">1-X1-X2</SB>N buffer layer 13. The In<SB POS="POST">X1</SB>Al<SB POS="POST">X2</SB>Ga<SB POS="POST">1-X1-X2</SB>N buffer layer 13 forms a heterojunction 21 with the GaN layer 17. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012023396(A) |
申请公布日期 |
2012.02.02 |
| 申请号 |
JP20110222175 |
申请日期 |
2011.10.06 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
YOSHIZUMI YUSUKE;UENO MASANORI |
| 分类号 |
H01L21/205;C23C16/34 |
主分类号 |
H01L21/205 |
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