发明名称 ZINC OXIDE SINTERED COMPACT, METHOD FOR MANUFACTURING THE SAME, SPUTTERING TARGET, AND METHOD FOR MANUFACTURING TRANSPARENT FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a zinc oxide sintered compact from which a sputtering target of good shape accuracy can be obtained even not perform heat treatment or the like after processing, and from which a transparent film in which stable discharge is continuously possible also by a DC sputtering method and which has suitable insulation can be obtained. <P>SOLUTION: When a zinc oxide powder in which the metal content other than zinc is less than 0.1% by weight, the BET specific surface area is 2-20 m<SP POS="POST">2</SP>/g, and the powder bulk density is 0.5-1.8 g/cm<SP POS="POST">3</SP>is fabricated, and calcinated, the calcination is performed such that the sintering temperature is 900-1,250&deg;C, and a gas flow parameter is at least 8,000 under the inert atmosphere in which oxygen is at most 10 vol.%. Thereby, the zinc oxide sintered compact in which the metal content other than zinc is less than 0.1 wt.% and the volume resistivity is at most 1.0&times;10<SP POS="POST">5</SP>&Omega;cm at 25&deg;C is manufactured, used as a sputtering target, and the transparency film is manufactured by a DC sputtering method. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012020911(A) 申请公布日期 2012.02.02
申请号 JP20100161449 申请日期 2010.07.16
申请人 TOSOH CORP 发明人 KURAMOCHI TOSHIHITO;IIGUSA HITOSHI;MESHIDA MASAMI;UCHIUMI KENTARO;SHIBUTAMI TETSUO
分类号 C04B35/453;C23C14/08;C23C14/34 主分类号 C04B35/453
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