发明名称 |
Solid-state imaging device and method of manufacturing the same, and imaging apparatus |
摘要 |
A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that photoelectrically converts incident light; an interconnection layer that is provided at a plane side opposite to the light receiving plane of the semiconductor substrate; a first groove portion that is provided between adjacent light receiving sections and is formed at a predetermined depth from the light receiving plane side of the semiconductor substrate; and an insulating material that is embedded in at least a part of the first groove portion.
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申请公布号 |
US2012025059(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113137093 |
申请日期 |
2011.07.20 |
申请人 |
KAWASHIMA ATSUSHI;HIRAMATSU KATSUNORI;MIYOSHI YASUFUMI;SONY CORPORATION |
发明人 |
KAWASHIMA ATSUSHI;HIRAMATSU KATSUNORI;MIYOSHI YASUFUMI |
分类号 |
H01L27/146;H01L31/0216;H01L31/18 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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