发明名称 |
METHOD OF OPERATING SEMICONDUCTOR MEMORY DEVICE |
摘要 |
According to one embodiment, a method of operating a semiconductor memory device is disclosed. The method can include storing read-only data in at least one selected from a memory cell of an uppermost layer and a memory cell of a lowermost layer of a plurality of memory cells connected in series via a channel body. The channel body extends upward from a substrate to intersect a plurality of electrode layers stacked on the substrate. The method can include prohibiting a data erase operation of the read-only memory cell having the read-only data stored in the read-only memory cell. |
申请公布号 |
US2012026775(A1) |
申请公布日期 |
2012.02.02 |
申请号 |
US201113052195 |
申请日期 |
2011.03.21 |
申请人 |
YAMADA KUNIHIRO;AOCHI HIDEAKI;KITO MASARU;FUJIWARA TOMOKO;FUKUZUMI YOSHIAKI;KIRISAWA RYOUHEI;MIKAJIRI YOSHIMASA;KAWASAKI KAORI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMADA KUNIHIRO;AOCHI HIDEAKI;KITO MASARU;FUJIWARA TOMOKO;FUKUZUMI YOSHIAKI;KIRISAWA RYOUHEI;MIKAJIRI YOSHIMASA;KAWASAKI KAORI |
分类号 |
G11C17/12 |
主分类号 |
G11C17/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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