发明名称 TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING A PN JUNCTION BASED ON SILICON/GERMANIUM MATERIALS
摘要 By incorporating germanium material into thermal sensing diode structures, the sensitivity thereof may be significantly increased. In some illustrative embodiments, the process for incorporating the germanium material may be performed with high compatibility with a process flow for incorporating a silicon/germanium material into P-channel transistors of sophisticated semiconductor devices. Hence, temperature control efficiency may be increased with reduced die area consumption.
申请公布号 US2012025276(A1) 申请公布日期 2012.02.02
申请号 US201113251532 申请日期 2011.10.03
申请人 STEPHAN ROLF;FORSBERG MARKUS;BURBACH GERT;MOWRY ANTHONY;ADVANCED MICRO DEVICES, INC. 发明人 STEPHAN ROLF;FORSBERG MARKUS;BURBACH GERT;MOWRY ANTHONY
分类号 H01L29/66;H01L21/66 主分类号 H01L29/66
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